报告题目:On the Materials Physics Governing Epitaxial Crystal Growths
报告人：谢亚宏教授
报告时间：15：30-16：30
报告地点：理B102
10.26加州大学洛杉矶分校谢亚宏教授学术讲座预告
讲座主题：On the Materials Physics Governing Epitaxial Crystal Growths
讲座时间：2016年10月27日，下午15：30-16：30
讲座地点：浙江工业大学屏峰校区理B102
主讲人：谢亚宏教授 （美国加州大学洛杉矶分校 ）报告摘要（Abstract）:
Epitaxial growth of thin films has been an integral part the microelectronics industry and a rich field of materials science. At the core of epitaxy is the intricate interplay between thermodynamics and kinetics of the atoms on surfaces.
In this talk, I will share with you my personal view of the complex relation of energetic versus kinetics through an array of examples. The discussion of the specific examples follows the order of increasing complexity and includes:
homo-epitaxy of Si on Si including doping;
lattice mismatched hetero-epitaxy of SiGe on Si;
polar-nonpolar hetero-epitaxy of InAs on Si;
hetero-epitaxy with extra large lattice mismatch as in GaN on Silicon;
the growths of 3-dimensional crystals on 2-dimensional van der Waals materials (graphene on graphene; GaN on graphene);
The discussions will highlight the importance of a clear sense of energetic and kinetics when dealing with each of these topics. Experimental as well as theoretical studies from our group at UCLA as well as from other groups from all around the world will be described when appropriate.
主讲人简介：
谢亚宏教授是美国加州大学洛杉矶分校的材料科学与工程学教授。1986年，他以研究员的身份加入AT&T贝尔实验室，1999年他成为美国加州大学洛杉矶分校的终身教授。在贝尔实验室工作期间，其研究活动包括自组装硅量子点及锗硅异质外延、锗硅/硅异质结构高迁移率二维电子及空穴气、垂直腔表面发射激光器、以及射频半导体技术开发。在美国加州大学洛杉矶分校工作期间的研究重点包括石墨烯研究。